晶片的来料检验.ppt
晶片的来料检验晶片的来料检验Chipoutsonedgeofdieshallnotpenetrateintoanyactivecircuitarea.Note:Activecircuitareaisdefinedasfromoutsideedgeofthebondpadsinward,exceptwherethereisanactivelineinthedesignlocatedbeyondtheoutsideedgeofthebondpadsCracks裂縫碎片邊緣不可 穿透線路活性的採納報廢Cracksshallnotbelongerthan1.0milinsideactivecircuitareathatpointstowardoperatingmetalorfunctionalcircuitelement.裂縫不可超過限度機能線路組成Cracksthatdonotpointtowardoperatingmetalorfunctionalcircuitelementsshallnotexceed5.0milsinlength.(Silicon&GaAsDie)裂縫指向不線路活性的不可 超過限度Discolorationinglassivationouterlayerisharmlessandshallbeacceptable,providingitisnotobscuringanyotherdamage.Thereshallbenocorrosioninmetallization,oranyotherlayers.Metallizationhavinganylocalizeddiscolorationshallbecloselyexaminedandshallberejected,unlessitisdemonstratedtobeaharmlessfilm,glassivationinterface,orothernon-obscuringeffects.Discoloration or Corrosion變色腐蝕狀態玻璃鈍化ThereshallbenoConductive(opaque)ForeignMaterialonthetopofunglassivateddiethatislargeenoughtobridgetwoormoreadjacentmetallizationareas,andthatcannotberemovedContamination or Foreign material混淆外來料子不透明橋梁ContaminationorForeignmaterialThereshallbenoconductive(opaque)ForeignMaterialunderthetopglassivationlayerofthediethatislargeenoughtobridgetwoormoreadjacentmetallizationareasThereshallbenoattachedorembeddedmaterialindiethatbridgestwoactivecircuitelements.GaAs:Thereshallbenoattachedorembeddedmaterialindiethatreducesspacingoftwoactivecircuitelementsbygreaterthan50percent.Silicon:Thereshallbenoattachedorembeddedmaterialindiethatdoesnotprovideavisiblelineofseparationbetweentwoactivecircuitelements.附加在.深留料子Thereshallbenoliquiddrops,chemicalstains,inkorphotoresistontopofunglassivatedareasthatbridgestwoactivecircuitelements.(Liquiddrops,chemicalstains,inkorphotoresistontopofglassivatedportionofthedieareacceptable).液體 水滴化學污點光致抗蝕劑GaAs(requirementonly)Thereshallbenocrackingorchippingwithinactivecircuitarea.Thereshallbenochipoutsthatextendbeyond50percentofthesubstratethicknessorcracksinsidewallsgreaterthan5.0mils.Silicon:Shallhaveavisiblelineofseparationbetweenbondpadsand/oroperatingmetallizationBridging and shorting連結短 路墊ACTIVECIRCUITAllareasfromoutsideedgeofthebondpadsinward,exceptwherethereisanactivelineinthedesignlocatedbeyondtheoutsideedgeofthebondpads.DIFFUSION-Electricalisolationofoneormoreactivecircuits.GLASSIVATIONToplayeroftransparentinsulatingmaterialthatcoversactiveareaexceptforbondpads.PASSIVATIONLAYER-Insulatingmaterialondiepriortodepositionofmetalorbetweenmetallayers.Note:Somediebydesignmaynothaveaglassivationlayer.GlassivationThereshallbenocrazingorglassivationdamagethatprohibitsvisualinspection.Thereshallbenocrazingorvoidsoverafilmresistor.Thereshallbenoliftingorpeelingmorethan1.0milinsidetheactiveareasfromthedesignededgeoftheglassivation.玻璃鈍化Thereshallbenoglassivationvoids,cracks(notcrazing)orscratchesthatexposestwoormoreadjacentactivemetallizationpaths.Thereshallbenounglassivatedareagreaterthan5.0mils.Thereshallbenounglassivatedareainsideofactiveareawhichexposesbaresemiconductormaterial.Thereshallnotbeglassivationovermorethan25percentofbondpad.洞穴裂縫Thereshallbenodiffusionfaultthatallowsbridgingbetweendiffusedareas.放散Thereshallbenobreaksindiffusion(exceptisolationwallsaroundunusedareasorunusedbondingpads).Thereshallbenoreductionofdiffusiongreaterthan75percent(50percentforresistors)oforiginalwidth.(exceptisolationwallsaroundunusedareasorunusedbondingpads)ThereshallbenoabsenceofglassivationoverjunctionlinesVoidsinthebondingpadshallnotreducemetallizationbymorethan25percentVoidsinthefilletareashallnotreducethemetallizationpathwidthconnectingthebondtotheinterconnectingmetallizationtolessthan50percentofthenarrowestenteringmetallizationstripewidth.洞穴Scratches,probemarks,etc.inbondpadsshallnotremovemorethan50percentofthemetalorexposeunderlyingmaterial探討印子在下面的Scratchesinmetaltracesshallnotresultinanyshorts.ThereshallbenoscratchesinmetaltracesthatresultinapossiblelayertolayershortScratchesorvoidsonmetaltracesshallnotbegreaterthan50percentofthetracewidth“W”.Groundingareasmayhavesmallvoidsinthetopmetallizationlayer.Holesshallnotpenetratesub-layers.Note:Adjustingofthemicroscopefocusordarkvisionwillhelpindeterminingifsub-layersarepenetrated.Thereshallbenovoidsinanycapacitors.Activecircuitmetallizationshallhavenodelamination,blistering,orpeelinginglassivation,metal,sub-leveldielectricsorotherlayers.Thereshallbenodelamination,blistering,orpeelinginglassivation,metal,sub-leveldielectricsorotherlayersthatmaybeincontactorunderactivecircuitmetallization.水泡剝