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1、主要内容n光刻机原理n光刻机主要性能参数nResolutionnDOFn光刻机主要工艺控制nDefocusnMisalign设备名称介绍NSR2005G8CNSR NIKON Step and Repeat Exposure System20 Max. Exposure Field is 20mm Square05 Reduction Ratio is 1/5G G-Line is Used as Exposure Light Source8 Body Type NumberC Projection Lens TypeExposure FieldField20mm15mm(mm)28.2821
2、.23Max. Width20000 2000015080 14940Max. Length19166 204009300 18860Square20000 2000015010 15010Mask PelliclePatternPellicleGlass驻波 Standing WavePEB、TARC、BARC可降低驻波效应NIKON机光路图椭球体 汞灯 快门 滤光镜 蝇眼积分器 聚光镜聚光镜 挡板光刻版光学镜头园片主要性能参数22NADNAkRk : 工艺系数kMIN =0.61NA : 数值孔径: 光源波长G-line (436nm)、I-line (365nm)、KrF (248nm)
3、、ArF、F2、数值孔径 Numerical ApertureNA: 描述多光学元件透镜系统的性能fDnNA2sinfDn: 透镜折射率2: 像点张角D: 透镜直径f: 透镜焦距焦深 Depth Of FocusnA plus or minus deviation from a defined reference plane wherein the required resolution for photolithography is still achievable.主要性能参数型号型号NAR(k=0.61)R(k=0.80)DOF1505G7D0.45436nm0.59um0.78um2.
4、15um1505I7A0.45365nm0.49um0.65um1.80um1505G6E0.54436nm0.49um0.65um1.50um2005G8C0.54436nm0.49um0.65um1.50um2005I8B0.50365nm0.58um1.46um2005I10C0.57365nm0.39um0.51um1.12um2005I11D0.63365um0.35um0.46um0.92umHow to Produce 0.4um Process?nTop ARC/Bottom ARCnMasknOptical Pattern Correction;nPhase-Shift Ma
5、sks;nOff-axis IlluminationnSHRINC (Super High Resolution by IllumiNation Contral) Inprove the DOF & Resolution of Repetitive grid-type patterns; nAnnular Offer a good balance, With adequate depth-of-field for isolated line patterns;nSmall Sigma Improve the resolution of isolated round patterns such
6、as Contate Holes.Focus-Exposure MatrixEvaluating the effects of focus and exposure on the results of a projection lithography system(such as a stepper) is a critical part of understanding and controlling a lithographic process.UnderExposedOverExposed工艺窗口 Process WindowCritical Dimension10%Sidewall A
7、ngle80Resist Loss10%Defocus 的影响Defocus 产生的原因nParticlenEdge, OF EffectnAuto FocusnAuto Leveling边缘效应Auto Focus光刻版卤素灯圆片狭缝透镜组传感器Auto FocusAuto LevelingAuto LevelingStageLaser Interferometer System对位过程n初始化基准标记位置 (Found Coordinates)n光刻版对位 (Align to Fiducial Mark)n园片对位 (Base on the Coordinates)nPre-Alignme
8、nt (Fiend the Orientation Flat)nSearch AlignmentnLSA (Laser Step Alignment)nFIA (Field Image Alignment)ng-EGA Alignment (Enhanced Global Alignment)nLSAnFIAAlignment ProcessAlignment MarkLSA vs. FIA对位方式光源优点缺点LSA激光灵敏度高,识别能力强,适合绝大多数层次不适合铝层及对位标记不对称的情况FIA卤素灯适合铝层及非对称对位标记对位速度慢,对台阶要求高Wafer Search Alignmentn
9、Search Y-T 对位;n确认圆片旋转;n确认Y位置;n确认X位置;n进行EGA对位。Wafer EGA AlignmentEGA CorrectionnOffset (um)nScaling (PPM)nWafer Rotation (urad)nX-Y Orthogonality (urad)nShot Magnification (PPM)对位点个数对对位精度的影响MisalignnOffset nIn ShotnMagnificationnShot RotationnBy ShotsnScalingnWafer RotationnOrthogonilityMisalignMisal
10、ignBlockSiteXYRowColXYXY11.1.2-0.049-0.07915891-349591-0.052-0.0740.003-0.00521.2.2-0.125-0.060726-349702-0.134-0.061-0.008-0.01731.3.2-0.0870.016-11-213283-0.0930.0170.006-0.00142.1.2-0.028-0.0676853677X1-X30.0410.0240.00752.2.2-0.108-0.0545337766Y1-Y3-0.0910.009-0.01162.3.2-0.0700.02352640137070.0
11、230.00673.1.2-0.054-0.0661589276XY-0.0020.00883.2.2-0.139-0.0567276510.005-0.003-0.022-0.01393.3.2-0.0980.026-101370720.0240.006-0.0050.009104.1.2-0.072-0.077-36759773-0.0030.008-0.020-0.003114.2.2-0.155-0.073-51918664-0.020-0.007-0.038-0.030124.3.2-0.1140.007-52656137085-0.005-0.005-0.021-0.010135.1.2-0.059-0.0791589452626-0.007-0.005145.2.2-0.143-0.06272952616XY-0.026-0.019155.3.2-0.0960.013-96626010.0520.074-0.003-0.00420.1170.04330.093-0.017CorrectionAverage51234Shot RotationuradMagnificationPPMOffset0.070.02umScaling0.42-0.02PPMWafer RotationuradOrthogonilityurad-2.024.29-0.120.01
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