(完整word版)西南科技大学2012模拟电子技术基础期末考试_试题及答案.pdf
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1、西南科技大学模拟电子技术试卷十西南科技大学 2012 模拟电子技术期末试卷1.单项选择题(在每一小题的四个备选答案中,选出一个正确的答案,并将其序号写在题干后的()内。每一小题 2 分,共 20 分)(1)杂质半导体中的少数载流子浓度取决于()A.掺杂浓度B.工艺C.温度D.晶体缺陷(2)硅稳压管在稳压电路中稳压时,工作于()A.正向导通状态B.反向电击穿状态C.反向截止状态D.反向热击穿状态(3)测得一放大电路中的三极管各电极相对一地的电压如图1 所示,该管为()A.PNP 型硅管B.NPN 型锗管C.PNP型锗管D.PNP型硅管(4)温度上升时,半导体三极管的()A.和 ICEO增大,uB
2、E下降B.和 uBE增大,ICEO减小2V 8V 2.2V 图 1 西南科技大学模拟电子技术试卷十C.减小,ICEO和 uBE增大D.、ICEO和 uBE均增大(5)在共射极、共基极、共集电极、共漏极四种基本放大电路中,uo与 ui相位相反、|Au|1的只可能是()A.共集电极放大电路B.共基极放大电路C.共漏极放大电路D.共射极放大电路(6)在四种反馈组态中,能够使输出电压稳定,并提高输入电阻的负反馈是()A.电压并联负反馈B.电压串联负反馈C.电流并联负反馈D.电流串联负反馈(7)关于多级放大电路下列说法中错误的是()A.Au等于各级电压放大倍数之积B.Ri等于输入级的输入电阻C.Ro等于
3、输出级的输出电阻D.Au等于各级电压放大倍数之和(8)用恒流源电路代替典型差动放大电路中的公共射极电阻RE,可以提高电路的()A.|Aud|文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W
4、10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q
5、4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4
6、I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O
7、1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M
8、3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4
9、J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4西南科技大学模拟电子技术试卷十B.|Auc|C.Rid D.KCMR(9)电路如图 2 所示,其中 U2=20V,C=100
10、 f。变压器内阻及各二极管正向导通时的电压降、反向电流均可忽略,该电路的输出电压Uo()。A.24V B.28V C.-28V D.-18V(10)在下列四种比较器中,抗干扰能力强的是()。A.迟滞比较器B.零比较器C.三态比较器D.窗口比较器2.填充题(每格 1 分,共 20 分)(11)当放大电路输入非正弦信号时,由于放大电路对不同频率分量有+_+D4 TR D3 Uo D2 U2+C D1 U1(图 2)_ _ 文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX
11、4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8
12、E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1
13、L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:
14、CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 H
15、W8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 Z
16、V1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编
17、码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4西南科技大学模拟电子技术试卷十不同的放大倍数而产生的输出失真为失真,由于相位落后与信号频率不成正比而产生的输出失真称为失真,这两种失真统称为失真或失真。(12)半导体三极管属控制器件,而场效应管属于控制器件。(13 按结构不同场效应管分为型和型两大类。(14)集成运放内部电路实际是一个、放大电路。(15)直流稳压电源由、及四个部分组成。(16)按幅频特性不同,滤波器可分滤波器、滤波器、滤波器、滤波器及滤波器等五种。3.分析计算题(共 60
18、分)(17)电路如图所示。已知RB1=50K,RB2=10K,RC=6K,RE=750,信号源内阻 RS=5K,负载电阻RL=10K,电源电压+VCC=12V,电容C1、C2的电容量均足够大,晶体管的=99,rbe=1k,UBE=0.7V。试求:(a)电压放大倍数 Au(=ioUU)及 Aus(=sUUo);Rs+uo usC2 RC RE RB2 RLRB1 C1 T ui+Vcc+文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1
19、W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3
20、Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J
21、4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2
22、O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7
23、M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX
24、4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8
25、E2O1W10P9 ZV1L7M3Q4Z4文档编码:CX4J4I1J1X7 HW8E2O1W10P9 ZV1L7M3Q4Z4西南科技大学模拟电子技术试卷十(b)输入电阻 Ri和输出电阻 Ro。(18)电路如图4 所示。已知RB1=RB2=RB=1K,RC1=RC2=RC=10K,RE=15K;RW=100,且其滑动端在中点;T1和 T2和的性能一致,1=2=100,rbe2=rbe2=rbe=2k;+VCC=+12V,-VBE=-12V。试求:(a)Aud及 Rid;(b)电路改成从 T2的集电极与“地”之间输出时的Auc及 KCMR。ui+VCC RC1 RC2 T1 T2 RB2 RW R
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